Patents (3)
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1:Title: Tunnel field effect transistor having anisotropic effective mass”, H. Ilatikhameneh, T. Ameen, B. Novakovic, R. Rahman, G. Klimeck, Purdue University, IN, USA, 4/42016, US-patent application 62/317835Year : 2015
Publication Type: Patents
Topic: STM Electronics
Abstract
A tunnel field effect transistor (TFET) device includes a substrate, heavily doped source and drain regions disposed at opposite ends of a channel region forming a PiN or NiP structure, the channel region including a first substantially parallelogram portion having a first length defined along a longitudinal axis extending from the source region to the drain region and a second substantially parallelogram portion having a second length defined along the longitudinal axis larger than the first length, the TFET device having an effective channel length that is an average of the first and second lengths. The channel region includes a channel material with a first effective mass along a longitudinal axis extending from the source region to the drain region and a second effective mass along a lateral axis perpendicular to the longitudinal axis, the first effective mass being greater than the second effective mass.
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2:Title: Dielectric Engineered Tunnel FET”, H. Ilatikhameneh, R. Rahman, G. Klimeck, Purdue University, IN, USA, 7/27/2015, US-patent application 62/197513Year : 2015
Publication Type: Patents
Topic: STM Electronics
Abstract
The dielectric engineered tunnel field-effect transistor (DE-TFET) as a high-performance steep transistor is proposed. In this device, a combination of high-k and low-k dielectrics results in a high electric field at the tunnel junction. As a result, a record ON-current of ~1000 μA/μm and a subthreshold swing (SS) below 20 mV/decade are predicted for WTe 2 DE-TFET. The proposed TFET works based on a homojunction channel and electrically doped contacts both of which are immune to interface states, dopant fluctuations, and dopant states in the bandgap, which typically deteriorate the OFF-state performance and SS in the conventional TFETs.
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3:Title: Semiconductor Charge Qubits for Adiabatic Quantum Annealing and Quantum Computing, Malcolm S. Carroll, Wayne Witzel, Noah Tobias Jacobson, Anand Ganti, Andrew J. Landahl, Michael P. Lilly, Khoi Thi Nguyen, Nathaniel Bishop, Stephen Carr, Ezra Bussmann, Erik Nielsen, James Ewers Levy, Robin Blume-Kohout, Rajib Rahman, (# 61757609), filed from Sandia National Laboratories, January 2013, US Patent 9,530,873 (2016)Year : 2013
Publication Type: Patents
Topic: 2D Materials
Abstract
A quantum computing device that includes a plurality of semiconductor adiabatic qubits is described herein. The qubits are programmed with local biases and coupling terms between qubits that represent a problem of interest. The qubits are initialized by way of a tuneable parameter, a local tunnel coupling within each qubit, such that the qubits remain in a ground energy state, and that initial state is represented by the qubits being in a superposition of |0> and |1> states. The parameter is altered over time adiabatically or such that relaxation mechanisms maintain a large fraction of ground state occupation through decreasing the tunnel coupling barrier within each qubit with the appropriate schedule. The final state when tunnel coupling is effectively zero represents the solution state to the problem represented in the |0> and |1> basis, which can be accurately read at each qubit location.
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