Book Chapters (3)
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1:Title: Verduijn J; Tettamanzi GC; Roggea S, 2013, 'Orbital structure and transport characteristics of single donors', in Prati E; Shinada T (ed.), Single-Atom Nanoelectronics, Pan Stanford Publishing, Stanford, pp. 211 - 230Year : 2013
Publication Type: Book Chapters
Topic: 2D Materials
Abstract
Single-Atom Nanoelectronics covers the fabrication of single-atom devices and related technology, as well as the relevant electronic equipment and the intriguing new phenomena related to single-atom and single-electron effects in quantum devices. It also covers the alternative approaches related to both silicon- and carbon-based technologies, also from the point of view of large-scale industrial production. The publication provides a comprehensive picture of the state of the art at the cutting edge and constitutes a milestone in the emerging field of beyond-CMOS technology.Although there are numerous publications on nanoelectronics, no book highlights the effect of a single atom on device performance, which can be beneficial for making extensive use of CMOS technologies. This book is the first to deal with topics related to single-atom control, which is the final frontier for nanoelectronics.
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2:Title: Tettamanzi G, 2012, 'Dopant Metrology in Advanced FinFETs', in Collaert N (ed.), CMOS NANOELECTRONICS: INNOVATIVE DEVICES, ARCHITECTURES, AND APPLICATIONS, Pan Stanford Publishing 2012, Singapore, pp. 399 - 412Year : 2012
Publication Type: Book Chapters
Topic:
Abstract
Ultra-scaled FinFET transistors bear unique fingerprint-like device-to-device differences attributed to random single impurities. Thischapter describes how, through correlation of experimental datawith multimillion atom tight-binding simulations using the NEMO3-D code, it is possible to identify the impurity’s chemical speciesand determine their concentration, local electric field and depthbelow the Si/SiO2 interface. The ability to model the excited statesrather than just the ground state is the critical component ofthe analysis and allows the demonstration of a new approach toatomistic impurity metrology.
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3:Title: Shaikh Ahmed, Neerav Kharche, Rajib Rahman, Muhammad Usman, Sunhee Lee, Hoon Ryu, Hansang Bae, Steve Clark, Benjamin Haley, Maxim Naumov, Faisal Saied, Marek Korkusinski, Rick Kennel, Michael McLennan, Timothy B. Boykin, and Gerhard Klimeck.Year : 2009
Publication Type: Book Chapters
Topic:
Abstract
The rapid progress in nanofabrication technologies has led to the emergence of new classes of nanodevices and structures. At the atomic scale of novel nanostructured semiconductors the distinction between new device and new material is blurred and device physics and material science meet. The quantum mechanical effects in the electronic states of the device and the granular, atomistic representation of the underlying material become important. The variety of geometries, materials, and doping configurations in semiconductor devices at the nanoscale suggests that a general nanoelectronic modeling tool is needed. The Nanoelectronic Modeling tool (NEMO 3-D) has been developed to address these needs. Based on the atomistic valence-force field (VFF) method and a variety of nearest-neighbor tight-binding models, NEMO 3-D enables the computation of strain for over 64 million atoms and of electronic structure for over 52 million atoms, corresponding to volumes of (110nmx110nmx110nm) and (101nmx101nmx101nm), respectively. This article discusses the theoretical models, essential algorithmic and computational components, and optimization methods that have been used in the development and the deployment of NEMO 3-D. Also, successful applications of NEMO 3-D are demonstrated in the atomistic calculation of single-particle electronic states of (1) self-assembled quantum dots including long-range strain and piezoelectricity; (2) stacked quantum dots ; (3) Phosphorus impurities in Silicon used in quantum computation; (4) Si on SiGe quantum wells (QWs); and (5) SiGe nanowires.
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